The Defence Research and Development Organisation (DRDO) is making remarkable advancements in semiconductor technology, according to its Chairman and Secretary of the Department of Defence Research and Development (DDR&D), Samir V. Kamat. He announced that the DRDO has successfully developed homegrown methods for creating four-inch Silicon Carbide (SiC) wafers and for manufacturing Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) with power outputs up to 150 Watts.
Speaking at a Friday event, which served as a prelude to the upcoming Emerging Science, Technology & Innovation Conclave (ESTIC-2025), Mr. Kamat underscored the indispensable role of semiconductors in today’s technological landscape. He highlighted their vital function in powering essential systems across various sectors, including healthcare, communications, transportation, defense, and space exploration.
Mr. Kamat further emphasized that as global economies embrace more advanced digitalization and automation, semiconductors are increasingly crucial for national security, driving economic growth, and ensuring technological independence. Reflecting on India’s semiconductor journey, he pointed out that the nation has moved swiftly from conceptualization to practical application within just four years since the India Semiconductor Mission (ISM) was initiated in 2021.
He concluded by reiterating India’s ambitious national goal: to be recognized as one of the top three global leaders in semiconductor technology by 2036, excelling in research, innovation, and talent development.